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| hexfet power mosfet s g 1 2 d3 micro3 tm parameter max. units r ja maximum junction-to-ambient 100 c/w thermal resistance parameter max. units v ds drain- source voltage -30 v i d @ t a = 25c continuous drain current, v gs @ -10v -3.0 i d @ t a = 70c continuous drain current, v gs @ -10v -2.4 a i dm pulsed drain current -24 p d @t a = 25c power dissipation 1.25 p d @t a = 70c power dissipation 0.80 linear derating factor 10 mw/c v gs gate-to-source voltage 20 v t j, t stg junction and storage temperature range -55 to + 150 c v ds -30 v r ds(on) max (@v gs = -10v) 98 r ds(on) max (@v gs = -4.5v) 165 q g (typical) 9.5 nc i d (@t a = 25c) -3.0 a m features benefits industry-standard pinout sot-23 package multi-vendor compatibility compatible with existing surface mount techniques ? easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability form quantity IRLML5203TRPBF-1 micro3 ? (sot-23) tape and reel 3000 IRLML5203TRPBF-1 package type standard pack orderable part number base part number !" downloaded from: http:/// !" parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -1.3a, v gs = 0v t rr reverse recovery time CCC 17 26 ns t j = 25c, i f = -1.3a q rr reverse recovery charge CCC 12 18 nc di/dt = -100a/ s source-drain ratings and characteristics # $ 24 %%% %%% %%% $ 1.3 %%% s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle & surface mounted on fr-4 board, t ' parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -30 CCC CCC v v gs = 0v, i d = -250 a v (br)dss / t j breakdown voltage temp. coefficient CCC 0.019 CCC v/c reference to 25c, i d = -1ma CCC CCC 98 v gs = -10v, i d = -3.0a CCC CCC 165 v gs = -4.5v, i d = -2.6a v gs(th) gate threshold voltage -1.0 CCC -2.5 v v ds = v gs , i d = -250 a g fs forward transconductance 3.1 CCC CCC s v ds = -10v, i d = -3.0a CCC CCC -1.0 v ds = -24v, v gs = 0v CCC CCC -5.0 v ds = -24v, v gs = 0v, t j = 70c gate-to-source forward leakage CCC CCC -100 v gs = -20v gate-to-source reverse leakage CCC CCC 100 v gs = 20v q g total gate charge CCC 9.5 14 i d = -3.0a q gs gate-to-source charge CCC 2.3 3.5 nc v ds = -24v q gd gate-to-drain ("miller") charge CCC 1.6 2.4 v gs = -10v t d(on) turn-on delay time CCC 12 CCC v dd = -15v t r rise time CCC 18 CCC i d = -1.0a t d(off) turn-off delay time CCC 88 CCC r g = 6.0 t f fall time CCC 52 CCC v gs = -10v c iss input capacitance CCC 510 CCC v gs = 0v c oss output capacitance CCC 71 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 43 CCC ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) (# m r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current # downloaded from: http:/// ) !" fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v 3.0a 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -10v -7.0v -5.5v -4.5v -4.0v -3.5v -2.7v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.70v 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -10v -7.0v -5.5v -4.5v -4.0v -3.5v -2.7v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.70v 0.1 1 10 100 2.0 3.0 4.0 5.0 6.0 7.0 v = -15v 20 s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j downloaded from: http:/// !" fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.0a v = -15v ds v = -24v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 200 400 600 800 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss downloaded from: http:/// ' !" fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) * * 1 0.1 % * * +, + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms downloaded from: http:/// - !" fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0 4 8 12 16 -i d , drain current (a) 0.00 0.10 0.20 0.30 0.40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = -10v v gs = -4.5v 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -v gs, gate -to -source voltage (v) 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = -3.0a downloaded from: http:/// . !" fig 14. threshold voltage vs. temperature typical power vs. time 0.001 0.010 0.100 1.000 10.000 100.000 time (sec) 0 10 20 30 p o w e r ( w ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 - v g s ( t h ) , v a r i a c e ( v ) i d = -250 a downloaded from: http:/// ! !" micro3 (sot-23 / to-236ab) part marking information 0.08 0.88 0.01 0.89 0.95 b s c mi l l ime t e r s min e e e1 d la a1a2 c m o b sy mi n max max .036 .0375 b s c dime ns ions inches b0.30 bbb 0.15 .008 ccc .006 0.25 bs c l1 l 0.40 0.60 .0118 b s c aaa 0.20 .004 0 8 8 0 2.80 1.20 0 e1 e d 5 6 3 12 ccc c b a b 5 6 e e1 a2 a a1 bbb c a b 3x b aaa c 3 s urf 0 3x l l1 h 4 7 2.10 e1 1.90 b s c .075 b s c .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236 .0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 1.90 [.075] 0.95 [.0375] 0.972 [.038] 2.742 [.1079] 0.802 [.031] r e comme nde d f oot p r int 3x 3x not e s 1. dimens ioning and tolerancing per as me y14.5m-1994. 4 datum plane h is located at the mold parting line. 5 datum a and b to be determined at datum plane h. 6 di me n s i ons d an d e 1 ar e me as u r e d at dat u m pl ane h . 2. dimensions are shown in millimeters and inches. 3. controlling dimension: millimet er. 7 dimension l is the lead length for soldering to a substrate. 8. outline conforms to jedec outline to-236ab. f = irlml6401 aa 27 lot code lead free dat e code e = irlml6402 x = part number code reference: d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 w = (1-26) if preceded by last digit of calendar year w = (27-52) if preceded by a letter y8 3 12 5 47 60 9 y c 03 wor k we e k 0102 a wb 04 d 24 26 25 xz y wor k we e k w h = irlml5203 g = irlml2502 k h g f e d c bj y 51 29 2830 c bd 50 x 52 z note: a l i ne above the wor k week (as shown here) indicates lead - free. i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = irlml0100 n = irlml2060 p = irlml9301 r = irlml9303 cu wi r e halogen free part number x = irlml2244 w = irf ml8244 v = irlml6346 u = irlml6344 t = irlml6246 s = irlml6244 z = irf ml9244 y = irlml2246 indus trial vers ion 2007 year 2003 2001 2002 2005 2004 2006 2007 2009 2008 2010 2003 2001 year 2002 2005 2004 2006 2009 2008 2010 2017 2013 20112012 2015 20142016 2017 2019 20182020 2013 20112012 2015 20142016 2019 20182020 downloaded from: http:/// / !" ? 2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. ! ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level micro3 ? (sot-23) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment 10/28/2014 ? updated partmarking to reflect industrial partmarking on page 8. downloaded from: http:/// |
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